2SA1625 transistor (pnp) features power dissipation p cm : 750 mw (tamb=25 ) collector current i cm : -0.5 a collector-base voltage v (br)cbo : -400 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -100 a, i e =0 -400 v collector-emitter breakdown voltage v (br)ceo ic= -1 ma, i b =0 -400 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -7 v collector cut-off current i cbo v cb = -400 v, i e =0 -1 a emitter cut-off current i ebo v eb = -5 v, i c =0 -1 a dc current gain h fe(1) v ce = -5 v, i c = -50 ma 40 200 collector-emitter saturation voltage v ce(sat) i c = -100 ma, i b = -10 ma -1 v base-emitter saturation voltage v be(sat) i c = -100 ma, i b = -10 ma -1.2 v transition frequency f t v ce = -10 v, i c = -10 ma 10 mhz collector output capacitance c ob v cb = -10 v, i e =0, f= 1 mhz 20 40 pf turn-on time t on 1 s storage time t stg 5 s fall-time t f v cc = -150 v, i c = -100 ma, i b! =i b2 -10 ma, rl=1.5k ? 1 s classification of h fe(1) rank m l k range 40-80 60-120 100-200 1 2 3 to-92 1. emitter 2. collector 3. base 2SA1625 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
|
